4

4.1 4- 1

4.2 4- 1

4.2.1 4- 4

4.2.2 4- 4

4.2.3 4- 4

4.2.4 4- 5

4.2.5 4- 7

4.2.6 4- 8

4.2.7 4-11

4.2.8 4-15

4.2.9 4-17

i

4

T04007DJ-4 2009.4 4-1

4.

4.1

( )

4.24.1 4.1

4

T04007DJ-4 2009.4 4-2

/

SEM

/

V - I

X

·

E B

E P M A

S I M S

A E S

4.1

4

T04007DJ-4 2009.4 4-3

X

SEM

TEM

OBIC/OBIRCH

IC

LSI

EB

CV

LCR

SR

EPMA

X

AES

IMA

X

ESCA

FIB

4.1

4

T04007DJ-4 2009.4 4-4

4.2.1

( )

( )

( )

4.2.2

(5 100 ) (

) ( )

(SAT )

4.2.3LSI

4

T04007DJ-4 2009.4 4-5

4.2.4a)X

X

X

(Al) (Si)

(Au) (Cu) (Fe) (Sn Bi Ag Pd)

( )

( ) ( 4.2 4.3)

X (1 μm 10 μm) CSP(Chip Size Package) TCP(Tape Carrier

Package)

4.2 X 4.3 CSP X

Au

4

T04007DJ-4 2009.4 4-6

b) (SAT )

Si ( )

( ) (

)

( )

( )

(SAT: Scanning Acoustic Tomograph)

( ) Si

( 4.4)

( ) ( )

( ) ( )

( 4.5)

Si ( )

SAT

4.4 4.5 ( )

4

T04007DJ-4 2009.4 4-7

4.2.5Si

a)

b)

c)

CSP(Chip Size Package) TCP(Tape Carrier Package)4.1)

a)

(70 80 ) (200 250 )

( )

b)

(O2)

(50 μm/h )

c)

4

T04007DJ-4 2009.4 4-8

3x0.7

x160

i

Si

x25

x1500

4.2.6

( )

1500

Al

Al

a)

4.2

4.2

4

T04007DJ-4 2009.4 4-9

Si

Si

b)SEM

SEM( Scanning Electron Microscope)

SEM

10 SEM

4.6 SEM

4.6 SEM

4

T04007DJ-4 2009.4 4-10

SEM

VC (Voltage Contrast )

EBIC (Electron Beam Induced Current )

pn pn

CL (Cathodoluminescence )

EPMA (Electron Probe Micro Analysis )

4.2.9

c)TEM

SEM

TEM( Transmission Electron Microscope) TEM

0.1nm 0.2nm Si

0.1 μm

4

T04007DJ-4 2009.4 4-11

4.2.7

EB

OBIRCH

a)EB

EB SEM LSl

4.7 EB

4.7 EB

b)CAD

( ) EB

4

T04007DJ-4 2009.4 4-12

c)

4.8

4.8 4.2)

4

T04007DJ-4 2009.4 4-13

d)

( ) 4.9

4.10

4.9 4.10

4

T04007DJ-4 2009.4 4-14

e) OBIRCH

OBIRCH (Optical Beam lnduced Resistance Change) Al4.3)

4.11

(a)OBIRCH (b) SIM

4.11 OBIRCH 4.4)

4

T04007DJ-4 2009.4 4-15

SiO2

HF

100nm/min

250nm/min

550nm/min

100nm/min

CVD at 800

10nm/min

180

150nm/min

0.5μm/min

1μm/min

PSG

Si3N4

H3PO4

Au

4g

1g

40ml

KI

I2

H2O

1ml

2ml

HCl

H2O

1ml

26ml

33ml

HF

HNO2

CH3COOH

28ml

170ml

113g

HF

H2O

NH3

Al

4.2.8a)

4.3

( ) ( )

4.3

4

T04007DJ-4 2009.4 4-16

b)

( )

4.12

4.12

c)FIB

SIM FIB(Focused Ion Beam) FIB

(Ga+) 0.1 μm

4.13 FIB

4.13 FIB 4.5)

Cu

Low- k

STI

55nm

N iSi

C u

Low- k

STI

55nm

N iSi

C u

Low- k

STI

55nm

N iSi

C u

Low- k

STI

55nm

N iSi

4

T04007DJ-4 2009.4 4-17

4.2.9

1 μm3 100ppm

4.4

a)EPMA(XMA)( Electron Probe Micro Analysis)

EPMA SEM SEM

EPMA

X

X X WDX( )

EDX( ) 4.14

EPMA

(a) SEM (b)EPMA Al

4.14 EPMA

4

T04007DJ-4 2009.4 4-18

b)SIMS ( Secondary Ion Mass Spectrometry)

SIMS (Ar) (O)

SIMS

I(M)MA

I(M)MA 1ppm

c)AES ( Auger Electron Spectroscopy)

AES

1nm 2nm 2 3

(H) (He)

0.1%

d)ESCA (XPS) ( Electron Spectroscopy for Chemical Analysis)

ESCA

e)XRFS ( X X-ray Fluorescence Spectroscopy)

XRFS

(P)

μm ppm

4

T04007DJ-4 2009.4 4-19

(0.1

keV

5keV

)

AE

SA

uger

Ele

ctro

n

Spec

trosc

opy

0.1

mm

1m

m

1nm

2nm

C

MA

Li

(100keV

200keV

)

AE

MA

nal

yti

cal

Ele

ctro

n

Mic

rosc

opy

0.

nm

ST

EM

+E

DX

(+E

LS

)(+

DL

T

S)(

+S

AC

P

ST

EM

TE

D(

20nm

)

ED

X(

10nm

)

SA

CP

(3nm

)

(keV

keV

)

CL

Cat

hodolu

min

esce

nce

>0.5

μm1μm

(10keV

40keV

)

EB

ICE

lect

ron B

eam

Induce

d

Curr

ent

1 μ

m μ

m

μm

pn

pn

X

(keV

30keV

)

ED

XX

Ener

gy D

isper

sive

X-r

ay S

pec

trosc

opy

>10nm

ST

EM

0.3

μm

μm

X

Si(

Li)

SS

D

X

0.1

EP

MA

EL

Ele

ctro

lum

ines

cence

PL

(keV

50keV

)

XE

PM

AE

lect

ron P

robe

Mic

ro

Anal

ysi

s

>0.5

μm0.3

μm

μm

XE

DX

WD

X

ED

XN

a

WD

XB

(10M

Hz)

EP

RE

lect

ron P

aram

agnet

ic

Res

onan

ce

ES

R

ES

CA

Ele

ctro

n S

pec

trosc

opy

for

Chem

ical

Anal

ysi

s

XP

SU

PS

SO

R

(10M

Hz)

ES

RE

lect

ron S

pin

Res

onan

ce

α-S

iH

4.4

4

T04007DJ-4 2009.4 4-20

(keV

)

FE

MF

ield

Em

issi

on

Mic

rosc

opy

nm

(keV

)

FIM

Fie

ld I

on M

icro

scopy

0.

nm

nm

Si

(0.5

MeV

)

HV

EM

Hig

h V

olt

age

Ele

ctro

n

Mic

rosc

opy

nm

TE

MT

EM

IBS

Ion B

ack S

catt

erin

g

RB

S

Ar

OC

s

keV

30keV

IMM

AIo

n M

icro

pro

be

(Mas

s)

Anal

ysi

s

1μm

2μm 0

.1μm

nm

10nm

ppb

ppm

2.5

μm16μm

IRIn

frar

ed A

bso

rpti

on

Spec

trosc

opy

0.1

cm-1

Si

OC

(15keV

500keV

)

LE

ED

Low

Ener

gy E

lect

ron

Dif

frac

tion

(eV

)

LE

EL

SL

ow

Ener

gy E

lect

ron

Loss

Spec

trosc

opy

AC

NM

RN

ucl

ear

Mag

net

ic

Res

onan

ce

α-S

iH

F

4

T04007DJ-4 2009.4 4-21

PL

Photo

lum

ines

cence

μm

H+

, H

e+

eVM

eV

RB

SR

uth

erfo

rd B

ack

Sca

tter

ing

5nm

20nm

Rut

herf

ord

SiO

2/S

i

(3keV

20keV

)

SA

MS

cannin

g A

uger

Mic

rosc

opy

50nm

0.

nm

2nm

AE

SS

EM

20nm

CM

A

100n

m)

SA

ES

Sca

nnin

g A

uger

Ele

ctro

n

Spec

trosc

opy

SA

M

(5keV

50keV

)

SE

MS

cannin

g E

lect

ron

Mic

rosc

opy

>3nm

SE

BE

Ar

O

eV10keV

SIM

SS

econdar

y I

on M

ass

Spec

trom

etry

100μm

500μm

I(M

)MA

SR

Spre

adin

g R

esis

tance

,μm

keV

200keV

ST

EM

Sca

nnin

g T

ransm

issi

on

Ele

ctro

n M

icro

scopy

1nm

nm

TE

M

SE

M

EE

LS

AE

M

Ga+

(5keV

30keV

)

SIM

Sca

nnin

g I

on M

icro

scopy

>10nm

SE

nm

4

T04007DJ-4 2009.4 4-22

(keV

30keV

)

Str

obo-

SE

MS

trobosc

opic

SE

M

3nm

ICp

s

(30keV

200keV

)

TE

MT

ransm

issi

on E

lect

ron

Mic

rosc

opy

0.

nm

5nm

CE

M

(

4keV

40eV

)

UP

SU

ltra

vio

let P

hoto

-em

issi

on

Spec

trosc

opy

X

(keV

keV

)

XW

DX

X

Wav

elen

gth

Dis

per

sive

X-r

ay S

pec

trosc

opy

μm0.3

μmμm

XX 0.0

1

EP

MA

XX

XD

X X-r

ay D

iffr

acto

met

ry

0.1

μmμm

X

XM

AX X

-ray

Mic

ropro

be

Anal

ysi

s

EP

MA

X

(keV

10keV

)

XP

SX X

-ray

Photo

-em

issi

on

Spec

trosc

opy

1nm

nm

XA

lKM

gK

XR

I

10keV

100keV

XX

RF

SX

X-r

ay F

luore

scen

ce

Spec

trosc

opy

0.1

μmμm

XE

DX

WD

X

N

Ni

X

keV

30keV

XX

RT

X X-r

ay T

opogra

phy

5µ

m

10μm

X

TV

4

T04007DJ-4 2009.4 4-23

( )

4.1) “CSP ” 26 pp.99

104(1996)

4.2) “ ” 26 pp.113 118(1995)

4.3) “ LSI ” 25

pp.29 36(1995)

4.4) W Al ” 44

29a-pc-20p.758(1997)

4.5) “65nm ” Vol.52, No.1,p.13 (2006)