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2007 Fairchild Semiconductor Corporation FDS6298 Rev. C1 ( W)

FDS629830V N-Channel Fast Switching PowerTrenchMOSFET

General Description

This N-Channel MOSFET has been designedspecifically to improve the overall efficiency of DC/DCconverters using either synchronous or conventionalswitching PWM controllers. It has been optimized forlow gate charge, low RDS(ON)and fast switching speed.

Applications

Control Switch for DC-DC Buck converters

Notebook Vcore

Telecom / Networking Point of Load

Features

13 A, 30 V. RDS(ON)= 9 m@ VGS= 10 V

RDS(ON)= 12 m@ VGS= 4.5 V

Low gate charge (10nC @ VGS=5V)

Very low Miller Charge (3nC)

Low Rg (1 Ohm)

ROHS Compliant

S

D

SS

SO-8

DD

D

G

DD

DD

SS

SG

Pin 1

SO-8

4

3

2

1

5

6

7

8

Absolute Maximum Ratings TA=25oC unless otherwise noted

Symbol Parameter Ratings UnitsVDSS Drain-Source Voltage 30 V

VGSS Gate-Source Voltage 20 V

Drain Current Continuous (Note 1a) 13ID

Pulsed 50A

Power Dissipation for Single Operation (Note 1a) 3.0PD

Power Dissipation for Single Operation (Note 1b) 1.2W

EAS Single Pulse Avalanche Energy (Note 3) 181 mJ

TJ, TSTG Operating and Storage Junction Temperature Range 55 to +150 C

Thermal CharacteristicsRJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 C/W

RJA Thermal Resistance, Junction-to-Ambient (Note 1b) 125 C/W

RJC Thermal Resistance, Junction-to-Case (Note 1) 25 C/W

Package Marking and Ordering InformationDevice Marking Device Reel Size Tape width Quantity

FDS6298 FDS6298 13 12mm 2500 units

FDS629830VN-C

hannelFastSwitchin

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Electrical Characteristics TA= 25C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BVDSS DrainSource Breakdown Voltage VGS= 0 V, ID= 250 A 30 - - V

BVDSS

TJ

Breakdown Voltage Temperature

Coefficient

ID= 250 A, Referenced to 25C - 30 - mV/C

IDSS Zero Gate Voltage Drain Current VDS= 24 V, VGS= 0 V - - 1 A

IGSS GateBody Leakage VGS= 20 V, VDS= 0 V - - 100 nA

On Characteristics (Note 2)

VGS(th) Gate Threshold Voltage VDS= VGS, ID= 250 A 1 1.7 3 V

VGS(th)TJ

Gate Threshold VoltageTemperature Coefficient

ID= 250 A, Referenced to 25C - 5 - mV/C

RDS(ON)Static DrainSourceOnResistance

VGS= 10 V, ID= 13 A

VGS= 4.5 V, ID= 12 A

VGS= 10 V, ID= 13 A, TJ=125C

-

7.4

9.4

11

9

12

15

m

gFS Forward Transconductance VDS= 10 V, ID= 13 A - 58 - S

Dynamic Characteristics

Ciss Input Capacitance - 1108 - pF

Coss Output Capacitance - 310 - pF

Crss Reverse Transfer Capacitance

VDS= 15 V, VGS= 0 V,f = 1.0 MHz

- 109 - pF

RG Gate Resistance VGS= 15 mV, f = 1.0 MHz 0.3 1 1.7

Switching Characteristics (Note 2)

td(on) TurnOn Delay Time - 11 20 ns

tr TurnOn Rise Time - 5 10 ns

td(off) TurnOff Delay Time - 27 43 ns

tf TurnOff Fall Time

VDD= 15 V, ID= 1 A,

VGS= 10 V, RGEN= 6

- 7 14 ns

Qg Total Gate Charge - 10 14 nC

Qgs GateSource Charge - 3 - nC

Qgd GateDrain Charge

VDS= 15 V, ID= 13 A,VGS= 5 V

- 3 - nC

DrainSource Diode Characteristics

VSDDrainSource Diode ForwardVoltage

VGS= 0 V, IS= 2.1 A (Note 2) - 0.74 1.2 V

trr Diode Reverse Recovery Time IF= 13 A, dIF/dt = 100 A/s - 27 - ns

Qrr Diode Reverse Recovery Charge - 13 - nC

Notes:

1. RJA

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

the drain pins. RJC

is guaranteed by design while RCA

is determined by the user's board design.

a) 50C/W when mountedon a 1in

2pad of 2 oz

copper

b) 125C/W when mounted on aminimum pad.

Scale 1 : 1 on letter size paper

2.Test: Pulse Width < 300s, Duty Cycle < 2.0%3.Starting TJ = 25C, L = 3mH, IAS= 11A, VDD= 30V, VGS= 10V

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Typical Characteristics

0

10

20

30

40

50

60

70

80

0 0.5 1 1.5 2 2.5

VDS, DRAIN-SOURCE VOLTAGE (V)

ID,DRAIN

CURRENT(A)

3.0V

4.5V

3.5.V

4.0VVGS= 10V

6.0V

0.8

1

1.2

1.4

1.6

1.8

2

2.2

2.4

2.6

0 10 20 30 40 50 60 70 80

ID, DRAIN CURRENT (A)

RDS(ON),NORMALIZE

D

DRAIN-SOURCEON-RESISTANCE

VGS= 3.0V

4.0V

5.0V4.5V

10V6.0V

3.5V

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation withDrain Current and Gate Voltage.

0.6

0.8

1

1.2

1.4

1.6

1.8

-50 -25 0 25 50 75 100 125 150

TJ, JUNCTION TEMPERATURE (oC)

RDS(ON),NORMALIZED

DRAIN-SOURCEON-RESISTANCE

ID= 13A

VGS= 10V

0.004

0.008

0.012

0.016

0.02

0.024

0.028

2 4 6 8 10

VGS, GATE TO SOURCE VOLTAGE (V)

RDS(ON),ON-RESISTANCE(OHM)

ID= 6.5A

TA= 125oC

TA= 25oC

Figure 3. On-Resistance Variation with

Temperature.

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

0

10

20

30

40

50

60

70

80

1.5 2 2.5 3 3.5 4

VGS, GATE TO SOURCE VOLTAGE (V)

ID,DRAIN

CURRENT(A) TA= -55

oC 25oC

125o

VDS= 5V

0.0001

0.001

0.01

0.1

1

10

100

0 0.2 0.4 0.6 0.8 1 1.2

VSD, BODY DIODE FORWARD VOLTAGE (V)

IS,REVERSEDRAIN

CURRENT(A)

TA = 125oC

25oC

-55oC

VGS= 0V

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variationwith Source Current and Temperature.

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Typical Characteristics

0

2

4

6

8

10

0 4 8 12 16 20

Qg, GATE CHARGE (nC)

VGS,GATE-SOURCEVOLTA

GE(V) ID= 13A VDS= 10V

20V

15V

0

300

600

900

1200

1500

0 5 10 15 20 25 30

VDS, DRAIN TO SOURCE VOLTAGE (V)

CAPACITANCE(pF)

CISS

CRSS

COSS

f = 1MHzVGS= 0 V

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

0.01

0.1

1

10

100

0.01 0.1 1 10 100

VDS, DRAIN-SOURCE VOLTAGE (V)

ID,DRAIN

CURRENT(A)

DC10s

1s

100ms

RDS(ON)LIMIT

VGS= 10V

SINGLE PULSE

RJA= 125oC/W

TA= 25oC

10ms1ms

100s

1

10

100

0.01 0.1 1 10 100 1000

tAV, TIME IN AVALANCHE (mS)

IAS,AVALANCHE

CURRENT(A)

25

125

Figure 9. Maximum Safe Operating Area. Figure 10. Unclamped Inductive SwitchingCapability

0

10

20

30

40

50

0.001 0.01 0.1 1 10 100t1, TIME (sec)

P(pk),PEAKTRANSIENTPOWER(W) SINGLE PULSE

RJA= 125C/W

TA= 25C

Figure 11. Single Pulse Maximum Power Dissipation.

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Typical Characteristics

0.001

0.01

0.1

1

0.0001 0.001 0.01 0.1 1 10 100 1000

t1, TIME (sec)

r(t),NORMALIZEDEFFE

CTIVE

TRANSIENTTHERMALRES

ISTANCE

RJA(t) = r(t) * RJA

RJA= 125 C/W

TJ- TA= P * RJA(t)

Duty Cycle, D = t1/ t2

P(pk)

t1t2

SINGLE PULSE

0.01

0.02

0.05

0.1

0.2

D = 0.5

Figure 12. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c.Transient thermal response will change depending on the circuit board design.

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2007 Fairchild Semiconductor Corporation www.fairchildsemi.com

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Advance Information Formative or In Design This datasheet contains the design specifications for product

development. Specifications may change in any manner without notice.Preliminary First Production This datasheet contains preliminary data; supplementary data will be

published at a later date. Fairchild Semiconductor reserves the right tomake changes at any time without notice to improve design.

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Rev. I26