I+D en el CNM/IMB para futuros aceleradores

Haga clic para modificar el estilo de texto del patrónI+D en el CNM/IMB parafuturos aceleradores

Manuel Lozano

Update from Santiago meeting, October 2008

ILC Meeting. Barcelona, May 2008

I+D en el CNM/IMB para futuros aceleradoresManuel Lozano

CNM Clean Room expansion From 1000 to 1500 m2 Still waiting for some equipments relevant for

advanced packaging Wafer grinder CMP Wafer alignment and bonding system (3D packaging)

Clean room operational, but not 100%

IFCA

Not ready

yet



New equipment: Plastic Laser-sintering system EOS FORMIGA P 100 (Germany) Very fast prototyping From CAD to piece in a couple of

hours Effective building volume:

20 cm x 25 cm x 33 cm Resolution ~0.1 mm 20 mm height/hr

Very interesting to test new ideas either at reduced scale or actual size or to make functional pieces



New equipment: Plastic Laser-sintering system

Very complex pieces Only limitation, no closed

cavities Different materials

available

Examples: Springs Nut and bolts Hinges Micropipes



IR transparent detectors

In collaboration with IFCA Mask finalized

12 different detectors Common parameters: active area= 1.2x1.5 cm2 circular window in the back

metal (r=0.5 cm) 256 readout strips with 1.5 cm

length 9 guard rings and scribe line

with n-well 6 detectors have been

completed with floating intermediate strips in order to improve spatial resolution using the capacitive charge division principle.

IFCA




Processing run started

IFCA

no5um17.5um12

no5um12.5um11

no3um15um10

no5um15um9

no10um15um8

no15um15um7

15um17.5um6

15um12.5um5

13um15um4

15um15um3

110um15um2

115um15um1

Intermediate stripsMetal widthp+ strip width

no5um17.5um12

no5um12.5um11

no3um15um10

no5um15um9

no10um15um8

no15um15um7

15um17.5um6

15um12.5um5

13um15um4

15um15um3

110um15um2

115um15um1

Intermediate stripsMetal widthp+ strip width

Si

n+

p+ p+p+p+ p+

15 μm strip width 5 μm metal width Intermediate strip




Will be tested at IFCA using ALIBAVA System with laser

IFCA

I0 70% I0 49% I0 34% I0

IR Laserpseudo track

IR light is partially absorbed by silicon detectors Ф≈1mm open in the Al allows beam-through

Si

n+

p+p+

p+p+

Si

n+

p+p+

p+p+

Si

n+

p+p+

p+p+

Si

n+

p+p+

p+p+

Si

n+

p+p+

p+p+

Si

n+

p+p+

p+p+

Partially funded by Spanish Acces to Large Facilities: GICSERV



Medipix2

Diodes 2Dspreading

Test structures

Atlas pixel

3d pads

strips

Long strip

10x10 matrixMOS

Test for SEM

3x3 matrix

Pilatus

3D detector technology



3D detector technology

Success with Medipix type pixel sensors

Now we are designing of a new mask set for ATLAS pixel sensors

Work done in the framework of RD50 collaboration.

Possibility of developing a prototype of B-layer for ATLAS upgrade with 3D pixels

0.5 m2, 2500 chips, 250 wafers CNM will try to get the contract

Partially funded by Spanish Acces to Large Facilities: GICSERV



ALIBAVA: A readout system for microstrip silicon sensors

System finished 20 units already distributed

New fabrication batch will start soon Upgrade for test beam telescope Upgrade for ethernet connectivity



Bump Bonding In collaboration with IFAE Bump bonding already working

Medipix and ATLAS pixels successfully bonded

Now working to increase yield and qualify the technology

SET/Süss FC150 machine 1 micron placing accuracy In-situ reflow



Trenched detectors

Work started in collaboration with IFAE (Cristobal Padilla)

Trenches used to reduce the dead area at the edge of the sensor (also named edgeless, slim-edge, ...)

First application for ATLAS pixels Can be extended to strips



•High resistivity polysilicon used to fill the trenches to assure mechanical strength•Thermal oxide inside trenches to assure insulation.

p+

p

10um30 um150um

Al

Side cut (D

RIE or D

iamond saw

)

polySiO2

n+p+

n+ n+

50 um 6um 80um

p-stopPixels

p+

Si3N4

guard

p+

UBM

300um

Δ 30um

Trenched detectors Initial configuration



Simulation The trench isolates the

depletion area from the damaged cut.

The equipotential lines accumulates at the implant decreasing the breakdown voltage.

However, it is still possible to over deplete the detector.

Accumulation of equipotential lines



Trench + diamond saw cut



Trench filled with polysilicon



ATLAS upgrade readout electronics

TECHNOLOGIES FEATURESKEY PARAMETERS

fT (GHz)

β (target)

VCE0

(V)

SGB25VD Low cost 50 190 4.5

SG25H1 MAIN TECHNOLOGY 190 200 1.9

SG25H3 Alternative 120 150 2.3

3 transistor types from SGB25VDtechnology (30, 50, 80 GHz)

Minimum transistor in tech. SG25H1 (0.17 μm2)

2 different transistors from tech. SG25H3 (0.17μm2 & 0.35μm2)

Study of 3 tecnologies 0.25 μm SiGe BiCMOS from IHP (Germany)



GICSERV

Easy access through the Spanish “Access to Large Facilities” Program: ICTS GICSERV

Last call January 2009 70 applications, 50 accesses

7 projects approved (1 rejected) in detector technology for HEP

3D medipix-type detectors. Diamond (UK) Stripixels. Laaperanta and BNL (Finland and USA) Thin pixel detectors. Univ. Santiago Thin strip detectors. IFCA Atlas pixels with slim edge. IFAE Increased efficiency detectors. Univ. Liverpool (UK) Bump bonding for DEPFETS. MPI Halbleiterlabor (Germany)

5 projects in 2008, and 3 in 2007



Conlusions

Transparent detectors processing. Bump bonding working Started activity in pixel and strip slim-edge

detectors ALIBAVA system finished and distributed Activity in ATLAS upgrade evaluating BiCMOS

technologies

GICSERV working satisfactory

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I+D en el CNM/IMB para futuros aceleradores